Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors

Reconfigurable Field Effect Transistors In article number 2300019, Giulio Galderisi and colleagues investigate the electrical properties of three-gated reconfigurable field effect transistors (RFETs) in harsh temperature conditions, ranging from 80 to 475 K. Resulting insights into physical mechanisms that regulate their switching are exhibited, providing useful data understand detail operation. This way, various application scenarios open up for these emerging nanoelectronics devices.